发明名称 |
METHOD OF FORMING A SILICON CARBIDE PMOS DEVICE |
摘要 |
Methods of forming a p-channel MOS device in silicon carbide include forming an n-type well in a silicon carbide layer, and implanting p-type dopant ions to form a p-type region in the n-type well at a surface of the silicon carbide layer and at least partially defining a channel region in the n-type well adjacent the p-type region. A threshold adjustment region is formed in the channel region. The implanted ions are annealed in an inert atmosphere at a temperature greater than 1650°C. A gate oxide layer is formed on the channel region, and a gate is formed on the gate oxide layer. A silicon carbide-based transistor includes a silicon carbide layer, an n-type well in the silicon carbide layer, and a p-type region in the n-type well at a surface of the silicon carbide layer and at least partially defining a channel region in the n-type well adjacent the p-type region. |
申请公布号 |
EP2033212(B1) |
申请公布日期 |
2013.10.16 |
申请号 |
EP20070776308 |
申请日期 |
2007.04.26 |
申请人 |
CREE, INC. |
发明人 |
DAS, MRINAL KANTI;ZHANG, QINGCHUN;RYU, SEI-HYUNG |
分类号 |
H01L21/18;H01L21/28;H01L21/324;H01L29/24 |
主分类号 |
H01L21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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