发明名称 |
Row decoder and non-volatile memory device |
摘要 |
A non-volatile memory device and a row decoder, the non-volatile memory device including: a memory cell array comprising a plurality of memory cells and each memory cell includes a first cell transistor and a second cell transistor; and a row decoder comprising a first driver and a second driver for generating first and second control signals. The first cell transistor is connected to the row decoder to receive the first control signal and the second cell transistor is connected to the row decoder to receive the second control signal. The first driver includes a first NMOS transistor and a first PMOS transistor formed adjacent to the first NMOS transistor. The second driver includes a second NMOS transistor and a second PMOS transistor formed adjacent to the second NMOS transistor. The first and second NMOS transistors are disposed between the first PMOS transistor and the second PMOS transistor.
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申请公布号 |
US8559230(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201113325219 |
申请日期 |
2011.12.14 |
申请人 |
NAM KI-BUM;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM KI-BUM |
分类号 |
G11C11/34;G11C16/06;H01L29/94 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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