| 摘要 |
It is an objective of the present invention to provide a thin film transistor substrate in which satisfactory contact between a drain electrode and a pixel electrode is achieved. A drain electrode (25d) includes a first conductive film (25dp), and a second conductive film (25dq) made of aluminum and stacked on the first conductive film (25dp). The second conductive film (25dq) is spaced apart from a first contact hole (27a) by a cavity section (28a) formed between the second conductive film (25dq) and the first contact hole (27a), where the cavity section (28a) is in communication with the first contact hole (27a). A pixel electrode (29) is provided to be out of contact with the second conductive film (25dq) of the drain electrode (25d). |
