发明名称 Light emitting diode
摘要 A light-emitting diode has a metal mesh pattern formed on an active layer without a transparent oxide conductive layer formed in between is disclosed. The mesh pattern is formed by using ion bombardment a metal layer so that myriad pits formed into the exposed portion of the active layer served as light emitting centers.
申请公布号 US8558269(B2) 申请公布日期 2013.10.15
申请号 US201113006550 申请日期 2011.01.14
申请人 CHEN WEN-PIN 发明人 CHEN WEN-PIN
分类号 H01L33/38 主分类号 H01L33/38
代理机构 代理人
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