发明名称 |
Writing scheme for phase change material-content addressable memory |
摘要 |
A method for programming a Phase Change Material-Content Addressable Memory (PCM-CAM). The method includes receiving a word to be written in a PCM-CAM. The word includes low bits represented by a low resistance state in the PCM-CAM and high bits represented by a high resistance state in the PCM-CAM. The method further includes repeatedly writing the low bits in memory cells of the PCM-CAM until the resistance of the memory cells are below a threshold value, and writing the high bits in memory cells of the PCM-CAM only once.
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申请公布号 |
US8560902(B1) |
申请公布日期 |
2013.10.15 |
申请号 |
US201213587146 |
申请日期 |
2012.08.16 |
申请人 |
LAM CHUNG H.;LI JING;MONTOYE ROBERT K.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LAM CHUNG H.;LI JING;MONTOYE ROBERT K. |
分类号 |
G11C29/00;G01R31/28 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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