发明名称 |
Method for fabricating field effect transistor devices with high-aspect ratio mask |
摘要 |
A method for forming feature on a substrate includes forming at least one layer of a feature material on a substrate, patterning a photolithographic resist material on the at least one layer of the feature material, removing portions of the feature material to define a feature, depositing a masking material layer over the resist material and exposed regions of the substrate, modifying a portion of the substrate, and removing the masking material layer and the resist material.
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申请公布号 |
US8557647(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US201113229154 |
申请日期 |
2011.09.09 |
申请人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ANDERSON BRENT A.;NOWAK EDWARD J.;RANKIN JED H. |
分类号 |
H01L21/335;H01L21/00;H01L21/336;H01L21/8232;H01L21/8234 |
主分类号 |
H01L21/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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