发明名称 Integrated circuit design using through silicon vias
摘要 A method of integrated circuit design using through silicon vias (TSVs) can include determining that a stress field to which a first active circuit element of a circuit block is exposed and a stress field to which a second active circuit element of the circuit block is exposed are mismatched. Mismatch between the stress field of the first active circuit element and the stress field of the second active circuit element can be reduced by modifying a layout of the die for a TSV.
申请公布号 US8560982(B2) 申请公布日期 2013.10.15
申请号 US201113170020 申请日期 2011.06.27
申请人 RAHMAN ARIFUR;XILINX, INC. 发明人 RAHMAN ARIFUR
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人
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