发明名称 |
Optical semiconductor device having ridge structure formed on active layer containing p-type region and its manufacture method |
摘要 |
A p-type cladding layer (3) of p-type semiconductor is formed over a substrate. An active layer (5) including a p-type semiconductor region is disposed over the p-type cladding layer. A buffer layer (10) of non-doped semiconductor is disposed over the active layer. A ridge-shaped n-type cladding layer (11) of n-type semiconductor is disposed over a partial surface of the buffer layer. The buffer layer on both sides of the ridge-shaped n-type cladding layer is thinner than the buffer layer just under the ridge-shaped n-type cladding layer.
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申请公布号 |
US8558245(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20070655229 |
申请日期 |
2007.01.19 |
申请人 |
YAMAMOTO TSUYOSHI;SUDO HISAO;FUJITSU LIMITED |
发明人 |
YAMAMOTO TSUYOSHI;SUDO HISAO |
分类号 |
H01L27/15 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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