发明名称 |
Semiconductor device with integrated piezoelectric elements and support circuitry |
摘要 |
A semiconductor device suitable for use in a pressure sensor is disclosed. A uniformly thin die is provided by chemically etching a back side of a wafer. Piezoelectric elements formed integrally within the die generate electrical signals in response to flexing the die. Conductive leads formed integrally within the die electrically communicate the generated electrical signals to support circuitry formed integrally within the die proximate the piezoelectric elements. In an example embodiment, the piezoresistive elements take the form of silicon resistors formed integrally via doping and diffusion in a Wheatstone bridge configuration. In one application, the die serves as a deformable diaphragm, seated atop an aperture of a threaded pressure sensor housing.
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申请公布号 |
US8558328(B2) |
申请公布日期 |
2013.10.15 |
申请号 |
US20100786969 |
申请日期 |
2010.05.25 |
申请人 |
LEGAT TIMOTHY JOHN;TEUTSCH ALEXANDER NOAM;TEGGATZ ROSS ELLIOT;MAHER THOMAS RICHARD;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LEGAT TIMOTHY JOHN;TEUTSCH ALEXANDER NOAM;TEGGATZ ROSS ELLIOT;MAHER THOMAS RICHARD |
分类号 |
H01L29/82 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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