| 摘要 |
A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.
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