| 摘要 |
PURPOSE: A selenization and sulfurization method for CIG(CuInGa) thin films with a solid diffusion method are provided to maximize the efficiency of a CIGS(CuInGaSe) film-type solar cell by forming a CIGS absorbing layer. CONSTITUTION: A method for manufacturing CIGS(CuInGaSe) comprises following steps. A Mo(Molybdenum) electrode layer is evaporated on a substrate. A CIG precursor layer is evaporated on the Mo(Molybdenum) electrode layer. Se(Selenium) or S(sulfur) is evaporated on the CIG precursor layer with a solid diffusion method. |
