发明名称 |
SILICON EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME |
摘要 |
The present invention includes a method for manufacturing a silicon epitaxial wafer having a silicon homoepitaxial layer formed on a surface of a silicon single crystal wafer, including the steps of: preparing the silicon single crystal wafer such that a plane orientation of the silicon single crystal wafer is tilted at an angle in the range from 0.1° to 8° in a <112> direction from a {110} plane; and growing the silicon homoepitaxial layer on the prepared silicon single crystal wafer. According to the present invention, a silicon epitaxial wafer using the {110} substrate with improved surface quality, such as Haze and surface roughness and a method for manufacturing the silicon epitaxial wafer are provided. |
申请公布号 |
KR20130113308(A) |
申请公布日期 |
2013.10.15 |
申请号 |
KR20127030143 |
申请日期 |
2011.04.28 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
SHIGA YUTAKA;TAKENO HIROSHI |
分类号 |
H01L21/20;H01L29/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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