NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A nonvolatile memory device and a manufacturing method thereof are provided to improve integration by forming a floating gate electrode with metal-semiconductor compounds. CONSTITUTION: A channel layer (190) vertically protrudes from a substrate. A tunnel insulating layer (180) surrounds the side of the channel layer. A plurality of interlayer dielectric layers and a plurality of control gate electrodes are alternatively laminated along the channel layer. A floating gate electrode (150) includes metal-semiconductor compounds. A charge blocking layer is interposed between the control gate electrode and the floating gate electrode.