发明名称 METHOD FOR GROWTH OF CARBON NANOFLAKES AND CARBON NANOFLAKES STRUCTURE
摘要 <p>PURPOSE: A method for growing carbon nanoflakes and a carbon nanoflake structure formed by the same are provided to enable a user to easily grow nanoflakes without an additional catalyst or plasma. CONSTITUTION: A method for growing carbon nanoflake comprises the steps of: preparing a silicone substrate equipped with carbon nanotubes; growing carbon nanoflakes on carbon nanotubes in a chemical vapor-deposition process using the mixing gas of methane, hydrogen and argon as a precursor. In the chemical vapor-deposition process, argon is excessive in the mixing gas of methane, hydrogen and argon. Graphene layers constituting carbon nanotubes are partially etched in an argon-excessive atmosphere. Graphene layers of carbon nanoflakes grow at the position of etching. [Reference numerals] (CNT,CNF) Graphene layer</p>
申请公布号 KR101313753(B1) 申请公布日期 2013.10.14
申请号 KR20120049140 申请日期 2012.05.09
申请人 KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 LEE, WOOK SEONG;LEE, HAK JOO;BAIK, YOUNG JOON;PARK, JONG KEUK
分类号 C01B31/02;B82B3/00;B82Y40/00 主分类号 C01B31/02
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