发明名称 |
METHOD FOR GROWTH OF CARBON NANOFLAKES AND CARBON NANOFLAKES STRUCTURE |
摘要 |
<p>PURPOSE: A method for growing carbon nanoflakes and a carbon nanoflake structure formed by the same are provided to enable a user to easily grow nanoflakes without an additional catalyst or plasma. CONSTITUTION: A method for growing carbon nanoflake comprises the steps of: preparing a silicone substrate equipped with carbon nanotubes; growing carbon nanoflakes on carbon nanotubes in a chemical vapor-deposition process using the mixing gas of methane, hydrogen and argon as a precursor. In the chemical vapor-deposition process, argon is excessive in the mixing gas of methane, hydrogen and argon. Graphene layers constituting carbon nanotubes are partially etched in an argon-excessive atmosphere. Graphene layers of carbon nanoflakes grow at the position of etching. [Reference numerals] (CNT,CNF) Graphene layer</p> |
申请公布号 |
KR101313753(B1) |
申请公布日期 |
2013.10.14 |
申请号 |
KR20120049140 |
申请日期 |
2012.05.09 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LEE, WOOK SEONG;LEE, HAK JOO;BAIK, YOUNG JOON;PARK, JONG KEUK |
分类号 |
C01B31/02;B82B3/00;B82Y40/00 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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