MAGNETORESISTIVE DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A magnetoresistive device utilizing the TMR effect has an improved heat resistance and a weakened Neel effect. The magnetoresistive device comprises a first ferromagnetic layer made of a ferromagnetic material, a nonmagnetic insulative tunnel barrier layer deposited on the first ferromagnetic layer, a second ferromagnetic layer made of a ferromagnetic material and deposited the tunnel barrier layer, and an antiferromagnetic layer made of an antiferromagnetic material. The second ferromagnetic layer is arranged between the tunnel barrier layer and the antiferromagnetic layer. A perpendicular extending vertically from an arbitrary point on the surface of the second ferromagnetic layer passes through at least two of the crystal grains which constitute the second ferromagnetic layer.