DEPOSITION METHOD TO SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of improving uniformity of a doping concentration distribution in a process of performing epitaxial growth of a SiC film on a SiC substrate.SOLUTION: In the method of performing epitaxial growth of a conductive SiC film on a SiC substrate, by doping in addition to a first dopant an appropriate amount of a second dopant whose incorporated atom position is different from that of the first dopant, a concentration distribution of a main first dopant is compensated by a concentration distribution of a second dopant so that a doping concentration is uniformed.