METHOD FOR MANUFACTURING MONOCRYSTALLINE SiC EPITAXIAL SUBSTRATE, AND MONOCRYSTALLINE SiC EPITAXIAL SUBSTRATE

摘要

Provided are a method for manufacturing a monocrystalline SiC epitaxial substrate, and a monocrystalline SiC epitaxial substrate, with which it is possible to prevent partial dislocations originating in TSDs from reconverting to TSDs when a VPE method is used to form a monocrystalline SiC epitaxial film on a substrate on which partial dislocations originating in TSDs exist. In this method for manufacturing a monocrystalline SiC epitaxial substrate, wherein a monocrystalline SiC epitaxial film is formed by a vapor phase epitaxy method on a monocrystalline SiC substrate in which partial dislocations accompanying Frank-type stacking faults originating in threading screw dislocations exist, the intervals of the partial dislocations propagating in the monocrystalline SiC epitaxial film are widened during the initial period of growth of the monocrystalline SiC epitaxial film by vapor phase epitaxy, thereby causing the partial dislocations to propagate in the monocrystalline SiC epitaxial film without reconverting to threading screw dislocations.