发明名称 LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a laser annealing device and a laser annealing method, capable of improving utilization efficiency of laser energy and efficiently performing anneal processing.SOLUTION: A laser annealing device for irradiating an amorphous silicon film 5 with a laser beam and performing anneal processing comprises: a first pulse laser 6 which generates a first laser beam Lof a constant wavelength having a constant pulse width; a second pulse laser 7 which generates a second laser beam Lhaving a longer pulse width and wavelength than the first laser light L; synthesizing means 8 for synthesizing the first laser beam Land the second laser beam Linto the same optical axis; and control means 3 for controlling a generation timing of the first laser beam Land the second laser beam Lby the action on the first pulse laser 6 and the second pulse laser 7. The control means 3 controls the first pulse laser 6 so that the first laser light Lis generated at a predetermined timing within a pulse width of the second laser beam L.
申请公布号 JP2013211415(A) 申请公布日期 2013.10.10
申请号 JP20120080706 申请日期 2012.03.30
申请人 V TECHNOLOGY CO LTD 发明人 MIZUMURA MICHINOBU
分类号 H01L21/268;H01L21/20;H01S3/00;H01S3/10;H01S3/23 主分类号 H01L21/268
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