发明名称 SEMICONDUCTOR DEVICES INCLUDING CONTACTS WHICH HAVE ENLARGED CONTACT AREAS WITH ACTIVES AND METHODS FOR FABRICATING THE SAME
摘要 PURPOSE: A semiconductor device including an active region and a contact with an enlarged contact area and a manufacturing method thereof prevent defects caused by pattern misalignment due to high integration. CONSTITUTION: A substrate (101) includes an element isolation film (105) defining a first junction region (11) and a second junction (12). A word line is buried in the substrate. A bit line (141) intersects with the word line on the word line. A first contact (135) is disposed between the substrate and the bit line and is electrically connected to the first junction region. A storage node contact hole is filled with a conductor and a second contact (157) is in contact with the second region.
申请公布号 KR20130110816(A) 申请公布日期 2013.10.10
申请号 KR20120033079 申请日期 2012.03.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, WON CHUL;KIM, EUN A;LEE, JA YOUNG
分类号 H01L27/108;H01L21/28;H01L21/8242 主分类号 H01L27/108
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