发明名称 |
SEMICONDUCTOR DEVICES INCLUDING CONTACTS WHICH HAVE ENLARGED CONTACT AREAS WITH ACTIVES AND METHODS FOR FABRICATING THE SAME |
摘要 |
PURPOSE: A semiconductor device including an active region and a contact with an enlarged contact area and a manufacturing method thereof prevent defects caused by pattern misalignment due to high integration. CONSTITUTION: A substrate (101) includes an element isolation film (105) defining a first junction region (11) and a second junction (12). A word line is buried in the substrate. A bit line (141) intersects with the word line on the word line. A first contact (135) is disposed between the substrate and the bit line and is electrically connected to the first junction region. A storage node contact hole is filled with a conductor and a second contact (157) is in contact with the second region. |
申请公布号 |
KR20130110816(A) |
申请公布日期 |
2013.10.10 |
申请号 |
KR20120033079 |
申请日期 |
2012.03.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, WON CHUL;KIM, EUN A;LEE, JA YOUNG |
分类号 |
H01L27/108;H01L21/28;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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