| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method that forms a contact hole with a stable shape and stable characteristic values even if an aluminum oxide film exists in the middle of a layer in which the contact hole is formed.SOLUTION: A method of manufacturing a semiconductor device includes: a step of forming a first element layer, a first interlayer insulating film, an etching stopper film, ferroelectric capacitor layers BEL, FEL, and TEL, a protective film AOL, and a second interlayer insulating film on a semiconductor substrate; a step of forming a resist pattern of a hole on the second interlayer insulating film; a first etching step of forming the hole by etching from the second interlayer insulating film to an upper layer of the etching stopper film; a stopper film removal step of removing the etching stopper film under the hole; and a second etching step of extending the hole to the element layer by etching the first interlayer insulating film under the hole. |
