发明名称 |
METHOD OF MANUFACTURING RADIATION DETECTION APPARATUS, RADIATION DETECTION APPARATUS, AND RADIATION IMAGING SYSTEM |
摘要 |
A method of manufacturing a radiation detection apparatus including a photoelectric conversion element that includes a first electrode placed above a substrate, a semiconductor layer placed on the first electrode, and a second electrode placed on the semiconductor layer includes forming the second electrode by removing a portion of an electrode layer formed over the semiconductor layer, the portion being located on an end section of the semiconductor layer. The method includes forming an insulating layer such that the insulating layer covers a portion of the semiconductor layer that is not covered by the second electrode. The method further includes forming a third electrode on at least one portion of the insulating layer such that the insulating layer is interposed between the third electrode and the end section of the semiconductor layer.
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申请公布号 |
US2013264485(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
US201313853780 |
申请日期 |
2013.03.29 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KAWANABE JUN;MOCHIZUKI CHIORI;WATANABE MINORU;YOKOYAMA KEIGO;OFUJI MASATO;FUJIYOSHI KENTARO;WAYAMA HIROSHI |
分类号 |
H01L31/0224;G01T1/24;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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