发明名称 |
Extremely High Frequency Dual-Mode Class AB Power Amplifier |
摘要 |
An Extremely High Frequency (EHF) dual-mode PA with a power combiner is designed using 40-nm bulk CMOS technology. One of the unit PAs can be switched off for the low power applications. In the design, circuit level optimization and trade-off are performed to ensure the good performance in both modes. The PA achieves a PSAT of 17.4 dBm with 29.3% PAE in high power mode and a PSAT of 12.6 dBm with 19.6% PAE in low power mode. The reliability measurements are also conducted and a lifetime of 80613 hours is estimated based on a commonly used empirical model. The excellent performance (e.g., highest reported PAE) achieved in this design further confirms the scaling of CMOS technology will continue to benefit the mm-wave transceiver design.
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申请公布号 |
US2013265108(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
US201213591061 |
申请日期 |
2012.08.21 |
申请人 |
DIETER JOOS;PHILIBERT WIM;REYNAERT PATRICK;ZHAO DIXIAN;ST-ERICSSON SA |
发明人 |
DIETER JOOS;PHILIBERT WIM;REYNAERT PATRICK;ZHAO DIXIAN |
分类号 |
H03F3/45 |
主分类号 |
H03F3/45 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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