| 摘要 |
<p>A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second deposition step. Each deposition step comprises a plurality of deposition cycles. The delay is introduced to the deposition process by prolonging a period of time for which a purge gas is supplied to a process chamber housing the substrate at the end of a selected one of the deposition cycles.</p> |
