发明名称 |
ELONGATED BUMPS IN INTEGRATED CIRCUIT DEVICES |
摘要 |
<p>PURPOSE: Elongated bumps in integrated circuit devices are provided to minimize stress in a low-k dielectric layer by optimizing the size of a bump structure. CONSTITUTION: A passivation layer (42) covers the edges of a metal pad (40). The passivation layer includes a first opening part which overlaps with the metal pad. A polymer layer (46) is located on the passivation layer. The polymer layer includes a second opening part which overlaps with the metal pad. A UBM (48) includes a first part which is located in the second opening part and a second part which is located on a part of the polymer layer.</p> |
申请公布号 |
KR20130111265(A) |
申请公布日期 |
2013.10.10 |
申请号 |
KR20130011156 |
申请日期 |
2013.01.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN YEN LIANG;CHEN CHEN SHIEN;KUO TIN HAO;WU SHENG YU;LIN TSUNG SHU;HUANG CHANG CHIA |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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