| 摘要 |
PURPOSE: A substrate processing method and a substrate processing apparatus are provided to suppress a water mark by drying a silicon substrate when water of a second temperature that is comparatively low is supplied to the surface of the silicon substrate. CONSTITUTION: A substrate rotating unit rotates a silicon substrate. A first temperature water supply unit supplies water of a first temperature to the surface of the silicon substrate. A second temperature water supply unit supplies the water of a second temperature to the surface of the silicon substrate. A control unit (30) controls the substrate rotating unit, the first temperature water supply unit, and the second temperature water supply unit. A cooling unit cools the water from the second temperature water supply unit below room temperature. [Reference numerals] (16) Arm jolting device; (30) Control unit; (31) Arm lifting device; (32) Stopping plate rotating device; (60) Cooling unit; (AA,BB) Ordinary temperature DIW; (CC) Nitrogen gas; (DD) Solution |
