发明名称 |
METHOD AND APPARATUS FOR FORMING FEATURES WITH PLASMA PRE-ETCH TREATMENT ON PHOTORESIST |
摘要 |
<p>A method for forming features through a photoresist mask into an underlying layer is provided. The photoresist mask has patterned mask features. The photoresist mask has patterned mask features. A treatment gas containing H2 and N2 is provided. A plasma is generated from the treatment gas, and the photoresist mask is exposed to the plasma. The treatment gas is stopped, and then the features are etched into the underlying layer through the plasma-treated photoresist mask.</p> |
申请公布号 |
WO2013151811(A1) |
申请公布日期 |
2013.10.10 |
申请号 |
WO2013US33587 |
申请日期 |
2013.03.22 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
SRIVASTAVA, RATNDEEP;ZHONG, QINGHUA;KIM, TAE WON;KAMARTHY, GOWRI |
分类号 |
H01L21/311;H01L21/3065 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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