发明名称 GAS FIELD ION SOURCE AND ION BEAM DEVICE
摘要 <p>This gas field ion source is characterized by emitting an ion beam in at least two operation states including: a first operation state in which ions are emitted from a first ion emission region at the tip of an emitter electrode when ionized gas pressure is set to a first gas pressure and a first extracting voltage is applied; and a second operation state in which ions are emitted from a second ion emission region larger than the first ion emission region when the gas pressure is set to a second gas pressure larger than the first gas pressure and a second extracting voltage larger than the first extracting voltage is applied. This makes it possible to obtain a large ion beam current while suppressing the possibility of an emitter electrode being broken.</p>
申请公布号 WO2013150861(A1) 申请公布日期 2013.10.10
申请号 WO2013JP56557 申请日期 2013.03.11
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 KAWANAMI YOSHIMI;MORITANI HIRONORI
分类号 H01J27/26;H01J37/08;H01J37/28;H01J37/317 主分类号 H01J27/26
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