METHOD FOR VAPOR-PHASE CLEANING SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, VAPOR-PHASE CLEANING APPARATUS, AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for vapor-phase cleaning a silicon carbide single crystal substrate, which can prevent the abnormal growth of an epitaxial layer growing on the silicon carbide single crystal substrate, a vapor-phase cleaning method, and a method for producing a silicon carbide semiconductor device.SOLUTION: A method for vapor-phase cleaning a silicon carbide single crystal substrate 20 includes the following steps. The silicon carbide single crystal substrate 20 is disposed in a reaction vessel 7 made from quartz. An inert gas is introduced into the reaction vessel 7. The conditions in which the temperature of the silicon carbide single crystal substrate 20 in the reaction vessel 7 is ≥900°C and ≤1,050°C, and the pressure inside the reaction vessel 7 is ≥1 Pa and ≤100 Pa is maintained. An oxide film 11 is formed on the surface 2 of the silicon carbide single crystal substrate 20 by introducing oxygen into the reaction vessel 7 while maintaining the temperature of the silicon carbide single crystal substrate 20 at ≥900°C and ≤1,050°C.