| 摘要 |
The invention relates to science of materials, more particularly to control of electro-conductivity of films and thicknesses of those by electric methods, and can be used at production of film semiconductor devices. Specific resistance of the films is determined by means of four equispaced probes, and the thickness of the i-th film dby means of the end and the fifth probes installed near by the value of resistance R, &rgr;of the film and geometrical dimensions of the film element. Advantage of the method is in that measurement of electric conductivity and thickness of films can be carried out simultaneously and continuously at one device. |
