| 摘要 |
A semiconductor device (100) is provided with: a gate electrode (3); a gate insulating layer (4); an oxide layer (50), which is formed on the gate insulating layer (4), and which includes a first semiconductor region (51) and a first conductor region (55), said oxide layer (50) having at least a part of the first semiconductor region (51) overlapping the gate electrode (3) with the gate insulating layer (4) therebetween; a source electrode (6s), which is formed to be in contact with the upper surface of the first semiconductor region (51) of the oxide layer (50); a drain electrode (6d), which is formed to be in contact with the upper surface of the first semiconductor region (51) of the oxide layer (50), and which is electrically connected to the first conductor region (55); and a conductive layer (60), which is formed in contact with the upper surface of the oxide layer (50), and which has a plurality of openings (66) or notches. The oxide layer (50) includes a plurality of second conductor regions (57, 58), each of which has a surface in each of the openings or notches of the conductive layer. |
