| 摘要 |
The invention concerns a method for producing a photovoltaic cell with interdigitated contacts in the rear face, comprising: - providing a doped silicon substrate (1), - forming, on the rear face (B) of said substrate (1), a doped semiconductor layer (10) with a first dopant species, - forming, on said layer (10), a dopant layer (11) comprising a second dopant species, of an electric type opposite to that of the first species (10), - forming, in the doped layer (10), at least one doped region (10a) of a type opposite to that of the first species, by irradiation of at least one region (11a) of the dopant layer (11) with a luminous flux of fluence greater than a threshold above which the dopants of the irradiated region (11a) of the dopant layer (11) diffuse into the region (10a) underlying the doped layer (10) in such a way as to exceed the concentration of the first dopant species, - forming, in the doped layer (10), at least one electrically insulating region (10b), by selective irradiation of at least one region (11b) of the dopant layer (11) with a luminous flux of which the fluence is in a range ([S1-S2]) lower than said threshold, at which the dopants of the irradiated region (11b) of the dopant layer (11) diffuse into the region (10b) underlying the doped semiconductor layer (10) in such a way as to balance the concentrations of the two dopant species in said region (10b). |
