| 摘要 |
A method of forming a free-standing (Al, Ga, In)N article, by the steps including: initiating growth of (Al,Ga,In)N material over a sacrificial template; partially parting said initially grown (Al,Ga,In)N material from said sacrificial template; continuing growth of said (Al,Ga,In)N material over said sacrificial template; following completion of said (Al,Ga,In)N material growth, completing removal of said (Al,Ga,In)N material from said sacrificial template to yield free-standing (Al,Ga,In)N material. The free-standing (Al, Ga, In)N article produced by such method is of superior morphological character, and suitable for use as a substrate, e.g., for fabrication of microelectronic and/or optoelectronic devices and device precursor structures. |
