| 摘要 |
PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve light emitting efficiency by forming a quantum dot and a cap layer thereof on a clad layer below an active layer using indium. CONSTITUTION: A clad layer is formed on an n-type contact layer (117). An InGaN quantum dot layer (121) is formed on the clad layer. A GaN cap layer (123) is formed on the InGaN quantum dot layer. An active layer (125) is formed on the GaN cap layer. A p-type clad layer (127) is formed on the active layer. A p-type contact layer (129) is formed on the p-type clad layer. |
