| 摘要 |
PURPOSE: A Cu-Ga alloy sputtering target and a manufacturing method thereof are provided to reduce gas component, such as oxygen compared to a pellet target, to reduce oxygen, and to also obtain the target in which dendrite is dispersed and which has a high-quality cast structure. CONSTITUTION: A Cu-Ga alloy sputtering target has a structure consisting of α phase in which Ga is employed in Gu or the mixed phase with α phase and ζ phase, and is formed with dendrite structure dispersed to the α phase or the mixed structure with α phase and ζ phase. The dendrite structure consists of a first arm and a second arm grown in a side direction from the first arm. The average length of the second arm is 30 to 60 μm, the average width of the second arm is 10 to 30 μm, and the average distance between the second arms is 20 to 80 μm. The maximum diameter of the first arm is 5 to 30 μm. [Reference numerals] (AA) First arm; (BB) Width of a second arm; (CC) Length of a second arm; (DD) Second arm; (EE) Space between second dendrite arms; (FF) Structure of a dendrite |
