发明名称 Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group
摘要 One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.
申请公布号 US8552712(B2) 申请公布日期 2013.10.08
申请号 US201113085606 申请日期 2011.04.13
申请人 KATO KIYOSHI;SEKINE YUSUKE;SHIONOIRI YUTAKA;FURUTANI KAZUMA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO KIYOSHI;SEKINE YUSUKE;SHIONOIRI YUTAKA;FURUTANI KAZUMA
分类号 G01R19/00;G01R13/04 主分类号 G01R19/00
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