发明名称 |
Current measurement method, inspection method of semiconductor device, semiconductor device, and test element group |
摘要 |
One object is to provide a method for measuring current by which minute current can be measured. A value of current flowing through an electrical element is not directly measured but is calculated from change in a potential observed in a predetermined period. The method for measuring current includes the steps of: applying a predetermined potential to a first terminal of an electrical element having the first terminal and a second terminal; measuring an amount of change in a potential of a node connected to the second terminal; and calculating, from the amount of change in the potential, a value of current flowing between the first terminal and the second terminal of the electrical element. Thus, the value of minute current can be measured.
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申请公布号 |
US8552712(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201113085606 |
申请日期 |
2011.04.13 |
申请人 |
KATO KIYOSHI;SEKINE YUSUKE;SHIONOIRI YUTAKA;FURUTANI KAZUMA;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO KIYOSHI;SEKINE YUSUKE;SHIONOIRI YUTAKA;FURUTANI KAZUMA |
分类号 |
G01R19/00;G01R13/04 |
主分类号 |
G01R19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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