| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to protect the entire surface of a copper pattern formed by a damascene method by using a barrier metal layer, thereby forming a stable metal line. CONSTITUTION: A lower copper pattern (115a) is buried in an interlayer dielectric layer (100). An upper copper pattern (115b) is positioned on the lower copper pattern. An upper barrier metal layer (120) is positioned on the upper and the lateral surface of the upper copper pattern. A lower barrier metal layer (110) is positioned on the lower and the lateral surface of the lower copper pattern. A protection layer (130) is positioned on the surface of the upper barrier metal layer and the surface of the interlayer dielectric layer. |
