发明名称 Nonvolatile semiconductor memory device and memory system having the same
摘要 A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number.
申请公布号 US8553459(B2) 申请公布日期 2013.10.08
申请号 US201113081094 申请日期 2011.04.06
申请人 SHINOZAKI NAOHARU;TAGUCHI MASAO;HATADA TAKAHIRO;SUGIMOTO SATORU;SAKURAKAWA SATOSHI;ELPIDA MEMORY, INC. 发明人 SHINOZAKI NAOHARU;TAGUCHI MASAO;HATADA TAKAHIRO;SUGIMOTO SATORU;SAKURAKAWA SATOSHI
分类号 G11C11/34 主分类号 G11C11/34
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