发明名称 |
Nonvolatile semiconductor memory device and memory system having the same |
摘要 |
A nonvolatile semiconductor memory device includes a first string including a first number of memory cells connected in series each storing therein information in a nonvolatile manner; and a second string including a second number of memory cells connected in series each storing therein information in a nonvolatile manner, wherein the second number is smaller than the first number.
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申请公布号 |
US8553459(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201113081094 |
申请日期 |
2011.04.06 |
申请人 |
SHINOZAKI NAOHARU;TAGUCHI MASAO;HATADA TAKAHIRO;SUGIMOTO SATORU;SAKURAKAWA SATOSHI;ELPIDA MEMORY, INC. |
发明人 |
SHINOZAKI NAOHARU;TAGUCHI MASAO;HATADA TAKAHIRO;SUGIMOTO SATORU;SAKURAKAWA SATOSHI |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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