| 发明名称 |
MOSFET gate and source/drain contact metallization |
| 摘要 |
A MOSFET is described incorporating a common metal process to make contact to the source, drain and the metal gate respectively which may be formed concurrently with the same metal or metals.
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| 申请公布号 |
US8551874(B2) |
申请公布日期 |
2013.10.08 |
| 申请号 |
US20100776369 |
申请日期 |
2010.05.08 |
| 申请人 |
SEO SOON-CHEON;DORIS BRUCE B.;YANG CHIH-CHAO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
SEO SOON-CHEON;DORIS BRUCE B.;YANG CHIH-CHAO |
| 分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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