发明名称 |
Method of manufacturing a semiconductor device |
摘要 |
In a method of manufacturing a semiconductor device, a barrier metal film and an aluminum metal film are formed on an insulating film on a semiconductor substrate. Two aluminum electrodes are formed in parallel with each other by patterning the barrier metal film and the aluminum metal film. The aluminum metal film in a region of part of each of the two aluminum electrodes are selectively removed to form two single-layer barrier metal electrodes separated from each other. A resistor is formed between the two single-layer barrier metal electrodes so as to electrically connect the two single-layer barrier metal electrodes to each other.
|
申请公布号 |
US8551854(B2) |
申请公布日期 |
2013.10.08 |
申请号 |
US201213409234 |
申请日期 |
2012.03.01 |
申请人 |
KATO SHINJIRO;HARADA HIROFUMI;SEIKO INSTRUMENTS INC. |
发明人 |
KATO SHINJIRO;HARADA HIROFUMI |
分类号 |
H01L29/8605 |
主分类号 |
H01L29/8605 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|