| 摘要 |
The present invention addresses the aims and issues of making multi layer microstructures including "metal-shell-oxide-core" structures and "oxide-shell-metal-core" structures, and mechanically constrained structures and the constraining structures using CMOS (complimentary metal-oxide-semiconductor transistors) materials and layers processed during the standard CMOS process and later released into constrained and constraining structures by etching away those CMOS materials used as sacrificial materials. The combinations of possible constrained structures and methods of fabrication are described.
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