Method for manufacturing multi-gate transistor device

摘要

A method for manufacturing a multi-gate transistor device includes providing a semiconductor substrate having a first patterned semiconductor layer formed thereon, sequentially forming a gate dielectric layer and a gate layer covering a portion of the first patterned semiconductor layer on the semiconductor substrate, removing a portion of the first patterned semiconductor layer to form a second patterned semiconductor layer, and performing a selective epitaxial growth process to form an epitaxial layer on a surface of the second patterned semiconductor layer.