| 摘要 |
A method using an associated composition for chemical mechanical planarization of a copper-containing substrate affords high copper removal rates and low dishing values during CMP processing of the copper-containing substrate, including an abrasive, at least three surfactants, preferably non-ionic and preferably three distinct surfactants, preferably in the range of 100 ppm to 2000 ppm per surfactant and an oxidizing agent.
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