发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that is provided with an oscillator formed on a semiconductor substrate and having high frequency accuracy.SOLUTION: A semiconductor device includes: a semiconductor substrate; an acoustic resonator formed on the semiconductor substrate, including a semiconductor layer containing an impurity, and resonating with a predetermined resonant frequency by an acoustic standing wave activated by the semiconductor layer; a temperature detection part formed on the semiconductor substrate and detecting the temperature of the semiconductor substrate; a calculation part formed on the semiconductor substrate and performing the calculation of the temperature compensation on the basis of the temperature detected by the temperature detection part, a type of impurity and a concentration of the impurity; and a control part formed on the semiconductor substrate and controlling the resonant frequency on the basis of the calculation result by the calculation part.
申请公布号 JP2013207275(A) 申请公布日期 2013.10.07
申请号 JP20120078261 申请日期 2012.03.29
申请人 TOSHIBA CORP 发明人 ABE KAZUHIDE;IIDA ATSUKO;ITAYA KAZUHIKO;WADATSUMI JUNJI;KOZAI SHOHEI
分类号 H01L21/822;H01L27/04;H03B5/02;H03B5/04;H03B5/30;H03H9/13 主分类号 H01L21/822
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