发明名称 FERROELECTRIC THIN FILM MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a ferroelectric thin film which has excellent material utilization efficiency, an intended film composition and excellent electrical characteristics.SOLUTION: A manufacturing method of a ferroelectric thin film on a lower electrode 20a comprises: electrostatic spraying a sol-gel solution 21 for ferroelectric thin film formation toward the lower electrode 20a of a substrate 20 having the lower electrode 20a from a discharge port 14a of a capillary 14 for coating the sol-gel solution 21 on the lower electrode 20a to form a coating film on the lower electrode 20a; and performing dehydration and calcination of the coating film and subsequently performing burning of the coating film for crystallization. A distance between the discharge port 14a of the capillary 14 and the lower electrode 20a and an applied voltage at the time of electrostatic spraying are set so as to make a refraction index after the dehydration and calcination of the coating film be 2 and over. And a fluid volume of the sol-gel solution 21 per one spray is set so as to make a film thickness when the sol-gel solution 21 by one spray is coated and calcined and subsequently burned and crystallized be within a range of 150 nm and under.
申请公布号 JP2013207155(A) 申请公布日期 2013.10.07
申请号 JP20120076096 申请日期 2012.03.29
申请人 MITSUBISHI MATERIALS CORP 发明人 IIDA SHINTARO;SAKURAI HIDEAKI
分类号 H01L21/316;H01L21/31;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108;H01L41/18;H01L41/187;H01L41/39 主分类号 H01L21/316
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