FERROELECTRIC CAPACITOR FOR FLEXIBLE NONVOLATILE MEMORY DEVICE, FLEXIBLE NONVOLATILE FERROELECTRIC MEMORY DEVICE, AND MANUFACTURING METHOD FOR THE SAME

摘要

The present disclosure relates to a flexible nonvolatile ferroelectric memory device, a 1T-1R (1Transistor-1Resistor) flexible ferroelectric memory device, and a manufacturing method for the same.