发明名称 EXPOSURE METHOD AND EXPOSURE DEVICE AND RESIST PATTERN FORMATION METHOD AND MATRIX MANUFACTURING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To correct a reduction in dosage caused by a PD in the exposure of a resist film consisting of a chemical amplification type resist more easily than in conventional technology.SOLUTION: In an exposure method for having a resist film 11 consisting of a chemical amplification type resist exposed to light by an exposure beam EB, a first round of exposure scan is executed with a designated irradiation dosage for each of designated exposure regions B1 to B16 of the resist film 11, in which if a path on which the first round of exposure scan was executed is assumed to be an outward path 80, then the second and subsequent rounds of exposure scan are executed while maintaining the irradiation dosage so that there will be the same number of outward paths 80 and return paths 81 on the whole.
申请公布号 JP2013207222(A) 申请公布日期 2013.10.07
申请号 JP20120077145 申请日期 2012.03.29
申请人 FUJIFILM CORP 发明人 CHAI SATOSHI;TAKANO YUKIO;SEKI TOMOKAZU
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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