| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor which can prevent decrease in on-state current while reducing leakage current.SOLUTION: A semiconductor device comprises: a first conductivity type substrate 10; a gate insulation film 20 provided on the substrate 10; a gate electrode 22 provided on the gate insulation film 20; source/drain regions 36 which are the second conductivity type opposite to the first conductive type, are positioned on both sides of the gate electrode 22, and have ends overlapping the gate electrode 22; and a counter region 32 which is formed by introduction of a first conductivity type impurity into the substrate 10, and is positioned on the drain region, and in which an end on the gate electrode 22 side is positioned inside the drain region. |
