发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, DISPLAY DEVICE AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents immersion of moisture into an oxide semiconductor film to improve TFT characteristics; and provide a manufacturing method of the semiconductor device, a display device and an electronic apparatus.SOLUTION: A semiconductor device comprises a transistor having an oxide semiconductor film, and an insulation film which covers the oxide semiconductor film and includes a resin material. The insulation film is covered with a surface modification layer which has a hydrophobic property higher than that of the resin material. |
申请公布号 |
JP2013207193(A) |
申请公布日期 |
2013.10.07 |
申请号 |
JP20120076758 |
申请日期 |
2012.03.29 |
申请人 |
SONY CORP |
发明人 |
NISHIYAMA MASANORI |
分类号 |
H01L21/336;H01L29/786;H01L51/50 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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