发明名称 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, DISPLAY DEVICE AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents immersion of moisture into an oxide semiconductor film to improve TFT characteristics; and provide a manufacturing method of the semiconductor device, a display device and an electronic apparatus.SOLUTION: A semiconductor device comprises a transistor having an oxide semiconductor film, and an insulation film which covers the oxide semiconductor film and includes a resin material. The insulation film is covered with a surface modification layer which has a hydrophobic property higher than that of the resin material.
申请公布号 JP2013207193(A) 申请公布日期 2013.10.07
申请号 JP20120076758 申请日期 2012.03.29
申请人 SONY CORP 发明人 NISHIYAMA MASANORI
分类号 H01L21/336;H01L29/786;H01L51/50 主分类号 H01L21/336
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