| 摘要 |
This cathode (120) includes: a target (C), which is used in a deposition system, which has backing plates (104, 214) having first main surfaces (104a, 214a), second main surfaces (104b, 214b), a first side surface (111) and a second side surface (112), a first matrix material (105), a second matrix material (106), and a rotating shaft (107) that passes through the backing plates (104, 214) from the first side surface (111) to the second side surface (112), and which is disposed inside a deposition space (50); a control part (E), which rotates the rotating shaft (107), and supplies power to be used for sputtering to the target (C) via the rotating shaft (107); and a magnetic field generation part (H) disposed in a position near the surfaces of the backing plates (104, 214), which are distant from the deposition space (50), in such a manner that a leakage flux is generated by the first matrix material (105) or the second matrix material (106). |
