| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of achieving a structure which can effectively protect a semiconductor switch element from surge voltage, while suppressing a reduction of a switching rate.SOLUTION: A semiconductor device 1 comprises: a voltage setting circuit 5 in which a first voltage setting circuit ZD1 and a second voltage setting circuit ZD2 are connected in series, formed between a drain terminal and a source terminal of a switch element SW1; and a first rectifier D1 in which its input terminal is connected to a connection part 6 side in the voltage setting circuit 5 and its output terminal is connected to a gate terminal side. A voltage applied to the gate terminal via the first rectifier D1, is less than a threshold value in normal time when an electric potential difference between the drain and the source is equal to or less than a predetermined value, and the voltage applied to the gate terminal via the first rectifier D1, increases so as to exceed the threshold value, and thereby the switch element SW1 turns ON to flow the current between the drain and the source in abnormal time when the electric potential difference between the drain and the source is more than the predetermined value. |
